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CS40N20ANH Datasheet - Huajing Microelectronics

CS40N20ANH Silicon N-Channel Power MOSFET

CS40N20 ANH ， the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization .

CS40N20ANH Features

* l Fast Switching l Low ON Resistance(Rdson≤0.065Ω) l Low Gate Charge (Typical Data:68nC) l Low Reverse transfer capacitances(Typical:7pF) l 100% Single Pulse avalanche energy Test Applications： UPS,Inverter,Lighting. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VG

CS40N20ANH Datasheet (233.37 KB)

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Datasheet Details

Part number:

CS40N20ANH

Manufacturer:

Huajing Microelectronics

File Size:

233.37 KB

Description:

Silicon n-channel power mosfet.

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CS40N20ANH Silicon N-Channel Power MOSFET Huajing Microelectronics

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