CS3N90A4H - Silicon N-Channel Power MOSFET

Huajing Microelectronics

CS3N90A4H Datasheet Preview — Preview of CS3N90A4H PDF

Datasheet Details

Part number	CS3N90A4H
Manufacturer	Huajing Microelectronics
File Size	418.23 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS3N90A4H-HuajingMicroelectronics.pdf

CS3N90A4H Product details

Description

CS3N90 A4H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

Features

l Fast Switching l Low ON Resistance(Rdson≤5.5Ω) l Low Gate Charge (Typical Data: 16nC) l Low Reverse transfer capacitances(Typical: 5pF) l 100% Single Pulse avalanche energy Test VDSS ID PD(TC=25℃) RDS(ON)Typ 900 V 3A 75 W 5Ω.

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Published: Dec 6, 2016 |