Datasheet Details
| Part number | CS3N60A3 |
|---|---|
| Manufacturer | Huajing Microelectronics |
| File Size | 341.65 KB |
| Description | Silicon N-Channel Power MOSFET |
| Datasheet |
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| Part number | CS3N60A3 |
|---|---|
| Manufacturer | Huajing Microelectronics |
| File Size | 341.65 KB |
| Description | Silicon N-Channel Power MOSFET |
| Datasheet |
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VDSS 600 V CS3N60 A3 the silicon N-channel Enhanced ID 3A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 55 W which reduce the conduction loss, improve switching RDS(ON)Typ 2.7 Ω performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is TO-251, which accords with the RoHS standard..
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