CS38N30AN Datasheet (Huajing Microelectronics) - Silicon N-Channel Power MOSFET

CS38N30AN, Silicon N-Channel Power MOSFET

CS38N30 AN, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TC=25℃) RDS(ON)Typ performance and enhance the avalanche energy.

The transistor can be used in various power switching circuit f

CS38N30AN Features

* l Fast Switching l Low ON Resistance(Rdson≤0.085Ω) l Low Gate Charge (Typical Data:123nC) l Low Reverse transfer capacitances(Typical:82pF) l 100% Single Pulse avalanche energy Test 300 38.5 290 0.045 V A W Ω Applications： Power switch circuit of electric welder. Absolute（Tc= 25℃ unless otherwi