CS2N80A3HY - Silicon N-Channel Power MOSFET

Huajing Microelectronics

CS2N80A3HY Datasheet Preview — Preview of CS2N80A3HY PDF

Datasheet Details

Part number	CS2N80A3HY
Manufacturer	Huajing Microelectronics
File Size	663.51 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS2N80A3HY-HuajingMicroelectronics.pdf

CS2N80A3HY Product details

Description

VDSS 800 V CS2N80 A3HY, the silicon N-channel Enhanced ID 2.0 A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 40 W which reduce the conduction loss, improve switching RDS(ON)Typ 4.8 Ω performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is TO-251, which accords with the RoHS standard..

Features

l Fast Switching l Low Gate Charge (Typical Data:12nC) l Low Reverse transfer capacitances(Typical:4.0pF) l 100% Single Pulse avalanche energy Test.

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Published: Dec 6, 2016 |