Datasheet Details
- Part number
- 8PA60N06AA-G
- Manufacturer
- Huajing Microelectronics
- File Size
- 1.82 MB
- Datasheet
- 8PA60N06AA-G-HuajingMicroelectronics.pdf
- Description
- Silicon N-Channel Power MOSFET
8PA60N06AA-G Description
Silicon N-Channel Power MOSFET 8PA60N06 AA-G ○R General .
8PA60N06 AA-G, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the high density Trench technology
which reduce the conduction loss, impro.
8PA60N06AA-G Applications
* Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
VDSS
ID
IDMa1 VGS EAS a2 dv/dt a3 PD TJ，Tstg TL
Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Pu
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