8PA60N06AA-G Silicon N-Channel Power MOSFET

Huajing Microelectronics

Description

Silicon N-Channel Power MOSFET 8PA60N06 AA-G ○R General .
8PA60N06 AA-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, impro.

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Datasheet Specifications

Part number: 8PA60N06AA-G
Manufacturer: Huajing Microelectronics
File Size: 1.82 MB
Datasheet: 8PA60N06AA-G-HuajingMicroelectronics.pdf
Description: Silicon N-Channel Power MOSFET

Applications

* Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 dv/dt a3 PD TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Pu

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