3DD5017 Datasheet (Huajing Microelectronics) - Low-frequency amplification shell rated bipolar transistors

3DD5017, Low-frequency amplification shell rated bipolar transistors

3DD5017 1.

3DD5017 NPN ，，。：、：TO-3P(H)IS 2.

15.5max 5.5max 3max Φ3.6 26.5max 4.5 2.1 ，Tamb= 25℃ - VCE0 650 V - VCB0 1100 V - VEB0 IC 7 15 V A 17max 2max 0.75max Ta=25℃ Ptot 3.0 Tc=25℃ 55 W Tj 150 ℃ 5.45 5.45 BCE 3.3min 0.9max Tstg -55～150 ℃ 2.2 ，Tamb= 25℃ - - - - ICB0 IEB0 hFEa（1） hFEa（2） VCEsata Va BEsat tf fT a: tp≤300μs,δ≤2% VCB=1100V, IE=0 VEB=7V, IC=0 VCE=5V, IC=1A VCE=5V, IC=