PF08109B - MOS FET Power Amplifier Module

Hitachi

Datasheet Details

Part number	PF08109B
Manufacturer	Hitachi
File Size	30.77 KB
Description	MOS FET Power Amplifier Module
Datasheet	PF08109B_Hitachi.pdf

2 in / 2 out dual band amplifire Simple external circuit including output matching circuit High gain 3stage amplifier : 0 dBm input Typ Lead less thin & Small package : 11 × 13.75 × 1.8 mm Typ High efficiency : 50% Typ at nominal output power for E-GSM 43% Typ at 32.7 dBm for DCS1800 Absolute Maximum Ratings (Tc = 25°C) Item Supply voltage Supply current Symbol Vdd Idd GSM Idd DCS Vtxlo voltage Vapc voltage Input power Operating case temperature.

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Published: Aug 28, 2005 |