MBM200GS6AW Datasheet (Hitachi)

MBM200GS6AW, IGBT POWER MODULE

IGBT MODU ODULE MBM200GS6AW Silicon N-channel IGBT OUTLINE DRAWING Unit in mm 94 4-Fast-on Terminal #110 G2 E2 FEAT RES EATURES High speed and low saturation voltage.

low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD).

Isolated head sink (terminal to base).

3-M5 2- φ 5.6 16 80 16 E2 16 C1 E1 C2E1 G1 23 7 12 6 35 23 39.5 φ 0.8 30 C2E1 G2 E2 E2 C1 E1 G1 Weight: 200 (g) TERMINALS ABSOLUTE MAXIMUM RATINGS (Tc=25°C ) Item Collector