Low on-resistance RDS =1.26 Ω typ. (VGS = 10 V , ID = 150 mA) RDS = 2.8 Ω typ. (VGS = 4 V , ID = 50 mA).
4 V gate drive device. Outline
SPAK
ADE-208-806 (Z) 1st. Edition. June 1999
D G
S
123
1. Source 2. Drain 3. Gate
2SK3380
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation
VDSS VGSS ID I Note1
D(pulse)
I DR Pch
Channel temperature.
