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K1405 - Silicon N-Channel MOS FET

Features

  • Low on-resistance.
  • High speed switching.
  • Low drive current.
  • Built-in fast diode (trr = 140 ns).
  • Suitable for motor control, switching regulator, DC-DC converter Outline TO-3PFM D G1 2 3 1. Gate 2. Drain 3. Source S 2SK1405 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note.

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2SK1405 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • Built-in fast diode (trr = 140 ns) • Suitable for motor control, switching regulator, DC-DC converter Outline TO-3PFM D G1 2 3 1. Gate 2. Drain 3. Source S 2SK1405 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2.
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