HZU6.2L - Silicon Epitaxial Planar Zener Diode for Surge Absorb

Hitachi

Datasheet Details

Part number	HZU6.2L
Manufacturer	Hitachi
File Size	28.31 KB
Description	Silicon Epitaxial Planar Zener Diode for Surge Absorb
Datasheet	HZU6.2L_HitachiSemiconductor.pdf

Lower reverse current leakage compared with conventional products.
Ultra small Resin Package (URP) is suitable for surface mount design. Ordering Information Type No. HZU6.2L Laser Mark 62C Package Code URP Outline Cathode mark Mark 1 62C 2 1. Cathode 2. Anode HZU6.2L Absolute Maximum Ratings (Ta = 25°C) Item Power dissipation Junction temperature Storage temperature Note 1. See Fig.2. Symbol Pd Tj Tstg.
1 Value 150 150 -55 to +150 Unit mW °C °C Electrical Charac.

📁 HZU6.2L Similar Datasheet

HZU6.2 - Silicon Epitaxial Planar Zener Diodes (Renesas Technology)
HZU6.8 - Silicon Epitaxial Planar Zener Diodes (Renesas Technology)
HZU6L - Silicon Epitaxial Planar Zener Diode (Renesas Technology)
HZU - (HZU Series) Silicon Epitaxial Planar Zener Diodes (Renesas Technology)
HZU10 - (HZU Series) Silicon Epitaxial Planar Zener Diodes (Renesas Technology)
HZU11 - Silicon Epitaxial Planar Zener Diodes (Renesas Technology)
HZU11L - Silicon Epitaxial Planar Zener Diode (Renesas Technology)
HZU12 - Silicon Epitaxial Planar Zener Diodes (Renesas Technology)

Other Datasheets by Hitachi

Published: Apr 23, 2005 |