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2SK2330S - Silicon N-Channel MOS FET

Download the 2SK2330S datasheet PDF. This datasheet also covers the 2SK2330 variant, as both devices belong to the same silicon n-channel mos fet family and are provided as variant models within a single manufacturer datasheet.

Features

  • Low on-resistance.
  • High speed switching.
  • No secondary breakdown.
  • Suitable for Switching regulator, DC-DC converter Outline HDPAK 4 4 1 2 3 D1 2 3 G 1. Gate 2. Drain 3. Source S 4. Drain November 1996 2SK2330(L), 2SK2330(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SK2330-Hitachi.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
2SK2331 N-Channel MOSFET Toshiba Semiconductor
2SK2332 N-Channel MOSFET Toshiba Semiconductor
2SK2333 HVX-2 Series Power MOSFET Shindengen Electric Mfg.Co.Ltd
2SK2333 N-Channel MOSFET Transistor Inchange Semiconductor
2SK2339 Silicon N-Channel Power F-MOS Panasonic Semiconductor

Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
2SK2330 Silicon N-Channel MOS FET
2SK2330L Silicon N-Channel MOS FET
2SK2334 Silicon N-Channel MOS FET
2SK2334L Silicon N-Channel MOSFET
2SK2334S Silicon N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2SK2330(L), 2SK2330(S) Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • No secondary breakdown • Suitable for Switching regulator, DC-DC converter Outline HDPAK 4 4 1 2 3 D1 2 3 G 1. Gate 2. Drain 3. Source S 4. Drain November 1996 2SK2330(L), 2SK2330(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2.
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