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2SK2330 - Silicon N-Channel MOS FET

Features

  • Low on-resistance.
  • High speed switching.
  • No secondary breakdown.
  • Suitable for Switching regulator, DC-DC converter Outline HDPAK 4 4 1 2 3 D1 2 3 G 1. Gate 2. Drain 3. Source S 4. Drain November 1996 2SK2330(L), 2SK2330(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1.

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Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
2SK2330L Silicon N-Channel MOS FET
2SK2330S Silicon N-Channel MOS FET
2SK2334 Silicon N-Channel MOS FET
2SK2334L Silicon N-Channel MOSFET
2SK2334S Silicon N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SK2330(L), 2SK2330(S) Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • No secondary breakdown • Suitable for Switching regulator, DC-DC converter Outline HDPAK 4 4 1 2 3 D1 2 3 G 1. Gate 2. Drain 3. Source S 4. Drain November 1996 2SK2330(L), 2SK2330(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2.
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