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2SJ321 - Silicon P Channel MOS FET

Hitachi

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Datasheet Details

Part number	2SJ321
Manufacturer	Hitachi
File Size	29.71 KB
Description	Silicon P Channel MOS FET
Datasheet	2SJ321-Hitachi.pdf

2SJ321 Product details

Features

Low on-resistance.
High speed switching.
Low drive current.
4 V gate drive device can be driven from 5 V source.
Suitable for switching regulator, DC-DC converter.
Avalanche ratings Outline TO-220CFM D 12 3 1. Gate G 2. Drain 3. Source S November 1996 2SJ321 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current.

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Published: Nov 20, 2016 |