2SC5470 - Silicon NPN Triple Diffused Planar Transistor

Hitachi

Datasheet Details

Part number	2SC5470
Manufacturer	Hitachi
File Size	34.80 KB
Description	Silicon NPN Triple Diffused Planar Transistor
Datasheet	2SC5470_Hitachi.pdf

High breakdown voltage VCBO = 1500 V.
High speed switching tf = 0.15 µsec(typ. ) at fH=64kHz Outline TO.
3PFM 1 2 3 1. Base 2. Collector 3. Emitter 2SC5470 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at Tc = 25° C Symbol VCBO VCEO VEBO IC ic(peak) PC Tj Tstg Note1 R.

📁 2SC5470 Similar Datasheet

2SC547 - Silicon NPN epitaxial planar type Transistor (Toshiba)
2SC5472 - NPN TRANSISTOR (Panasonic Semiconductor)
2SC5473 - NPN TRANSISTOR (Panasonic Semiconductor)
2SC5474 - NPN TRANSISTOR (Panasonic Semiconductor)
2SC5476 - NPN Epitaxial Planar Silicon Darlington Transistor (Sanyo Electric)
2SC5478 - NPN TRANSISTOR (Panasonic Semiconductor)
2SC5404 - NPN TRANSISTOR (Toshiba Semiconductor)
2SC5405 - NPN TRANSISTOR (Panasonic Semiconductor)

Other Datasheets by Hitachi

Published: Sep 14, 2005 |