PF0210 - MOS FET Power Amplifier Module for ADC Mobile Phone

Hitachi Semiconductor

Datasheet Details

Part number	PF0210
Manufacturer	Hitachi Semiconductor
File Size	47.89 KB
Description	MOS FET Power Amplifier Module for ADC Mobile Phone
Datasheet	PF0210_HitachiSemiconductor.pdf

High efficiency: 34% Typ for CW 30% Typ for π/4-DQPSK.
Low input power: 0 dBm ave. Typ for π /4-DQPSK.
Simple bias circuit.
High speed switching: 8 µs Typ Pin Arrangement.
RF-B2 5 4 3 2 5 1 1: Pin 2: VAPC 3: VDD 4: Pout 5: GND PF0210 Internal Diagram and External Circuit G GND Pin1 Pin Pin2 VAPC Pin3 VDD Pin4 Pout G GND Z1 C1 FB1 C3 FB2 C2 Z2 Pin VAPC VDD Pout C1 = C2 = 0.01 µF (Ceramic chip capacitor) C3 = 330 µF (Aluminum Electrolyt.

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Published: Mar 22, 2005 |