Datasheet4U Logo Datasheet4U.com

K2930 - 2SK2930

Key Features

  • Low on-resistance R DS =0.020 Ω typ.
  • High speed switching.
  • 4V gate drive device can be driven from 5V source Outline TO.
  • 220AB D G 1 2 S 3 1. Gate 2. Drain(Flange 3. Source 2SK2930 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VG.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
K2935 N-Channel 60V MOSFET VBsemi
K2936 Silicon N Channel MOS FET Renesas
K2937 2SK2937 Renesas Technology
K2900-01 N-channel MOS-FET Fuji Electric
K2902-01MR 2SK2902-01MR Fuji Electric

Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
K2936 2SK2936
K2938 2SK2938
K2926 2SK2926
K2929 2SK2929
K2958 2SK2958

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2SK2930 Silicon N Channel MOS FET High Speed Power Switching ADE-208-553C (Z) 4th. Edition Jun 1998 Features • Low on-resistance R DS =0.020 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline TO–220AB D G 1 2 S 3 1. Gate 2. Drain(Flange 3. Source 2SK2930 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note3 Note3 Note2 Note1 Ratings 60 ±20 35 140 35 35 105 50 150 –55 to +150 Unit V V A A A A mJ W °C °C EAR Pch Tch Tstg 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3.