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HSC278 Silicon Schottky Barrier Diode

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Description

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.Th.

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Datasheet Specifications

Part number
HSC278
Manufacturer
Hitachi Semiconductor
File Size
71.61 KB
Datasheet
HSC278_HitachiSemiconductor.pdf
Description
Silicon Schottky Barrier Diode

Features

* Low forward voltage, Low capacitance.
* Ultra small Flat Package (UFP) is suitable for surface mount design. Ordering Information Type No. HSC278 Laser Mark S6 Package Code UFP Pin Arrangement Cathode mark Mark 1 S6 2 1. Cathode 2. Anode HSC278 Absolute Maximum Ratings (Ta = 2

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