HM514400B - 1/048/576-word X 4-bit Dynamic Random Access Memory

Hitachi Semiconductor

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Datasheet Details

Part number	HM514400B
Manufacturer	Hitachi Semiconductor
File Size	235.11 KB
Description	1/048/576-word X 4-bit Dynamic Random Access Memory
Datasheet	HM514400B_HitachiSemiconductor.pdf

HM514400B Product details

Description

Pin name A0 to A9 A0 to A9 I/O1 to I/O4 RAS CAS WE OE VCC VSS Function Address input Refresh address input Data-in/Data-out Row address strobe Column address strobe Read/Write enable Output enable Power (+5 V) Ground 4 Block Diagram RAS Row Driver Row Driver RAS Control Circuit 256 k Memory Array Mat 256 k Memory Array Mat I/O1 I/O1 Buffer I/O Bus & Column Decoder Row Driver Row Driver I/O Bus & Column Decoder 256 k Memory Array Mat 256 k Memory Array Mat 256 k Memory Array Mat Row D

Features

Single 5 V (±10%).
High speed.
Access time 60 ns/70 ns/80 ns (max).
Low power dissipation.
Active mode 605 mW/550 mW/495 mW (max).
Standby mode 11 mW (max) 0.55 mW (max) (L-version).
Fast page mode capability.
1024 refresh cycles : 16 ms 1024 refresh cycles : 128 ms (L-version).
3 variations of refresh.
RAS-only refresh.
CAS-before-RAS refresh.
Hidden refresh HM514400B/BL, HM514400C/CL S.

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Other Datasheets by Hitachi Semiconductor

HM514400BL - 1/048/576-word X 4-bit Dynamic Random Access Memory
HM514400A - 1M-Bit x 4-BIT DYNAMIC RAM
HM514400AL - 1M-Bit x 4-BIT DYNAMIC RAM
HM514400ASL - 1M-Bit x 4-BIT DYNAMIC RAM
HM514400C - 1/048/576-word X 4-bit Dynamic Random Access Memory
HM514400CL - 1/048/576-word X 4-bit Dynamic Random Access Memory

Published: Mar 26, 2005 |