HE8812SG - GaAlAs Infrared Emitting Diode

Hitachi Semiconductor

Datasheet Details

Part number	HE8812SG
Manufacturer	Hitachi Semiconductor
File Size	168.39 KB
Description	GaAlAs Infrared Emitting Diode
Datasheet	HE8812SG_HitachiSemiconductor.pdf

The HE8812SG is a GaAlAs double heterojunction structure 870 nm band light emitting diode.

High efficiency and high output power Package Type.
HE8812: SG1 Internal Circuit 1 2 HE8812SG Absolute Maximum Ratings (TC = 25°C) Item Forward current Reverse voltage Operating temperature Storage temperature Symbol IF VR Topr Tstg Value 250 3.
20 to +60.
40 to +90 Unit mA V °C °C Optical and Electrical Characteristics (TC = 25°C) Item Optical output power Peak wavelength Spectral width Forward voltage Reverse current Capacitance Rise time Fall time Symbol.

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Published: Dec 30, 2006 |