HB56SW3272ESK-6 - 256MB Buffered EDO DRAM DIMM 32-Mword x 72-bit/ 4k Refresh/ 2 Bank Module(36 pcs of 16M x 4 components)

Hitachi Semiconductor

The HB56SW3272ESK-6 by Hitachi Semiconductor is a 256MB Buffered EDO DRAM DIMM 32-Mword x 72-bit/ 4k Refresh/ 2 Bank Module(36 pcs of 16M x 4 components). Below is the official datasheet preview.

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HB56SW3272ESK-6 256MB Buffered EDO DRAM DIMM 32-Mword x 72-bit/ 4k Refresh/ 2 Bank Module(36 pcs of 16M x 4 components) by Hitachi Semiconductor - Datasheet Preview — Official preview page of the **HB56SW3272ESK-6** 256MB Buffered EDO DRAM DIMM 32-Mword x 72-bit/ 4k Refresh/ 2 Bank Module(36 pcs of 16M x 4 components) datasheet (Hitachi Semiconductor).

Datasheet Details

Part number	HB56SW3272ESK-6
Manufacturer	Hitachi Semiconductor
File Size	338.46 KB
Description	256MB Buffered EDO DRAM DIMM 32-Mword x 72-bit/ 4k Refresh/ 2 Bank Module(36 pcs of 16M x 4 components)
Datasheet	HB56SW3272ESK-6_HitachiSemiconductor.pdf
Additional preview pages of the HB56SW3272ESK-6 datasheet.

HB56SW3272ESK-6 Product details

Description

The HB56SW3272ESK belong to 8-byte DIMM (Dual in-line Memory Module) family , and have been developed an optimized main memory solution for 4 and 8-byte processor applications.

Features

168-pin socket type package (Dual lead out)  Lead pitch : 1.27 mm.
Single 3.3 V supply (±0.3 V).
High speed  Access time: tRAC = 50 ns/60 ns (max)  Access time: tCAC = 18 ns/20 ns (max).
Low power dissipation  Active mode: 8.78 W/7.49 W (max)  Standby mode (TTL): 295.2 mW (max).
JEDEC standard outline buffered 8-byte DIMM.
Buffered input except RAS and DQ HB56SW3272ESK-5/6.
4-byte interleave enabl.

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Published: Mar 23, 2005 |