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D2485 - 2SD2485

Key Features

  • Low saturation voltage VCE(sat) = 0.1 V typ. (at IC = 1 A, IB = 50 mA).
  • Large current capacitance IC = 2 A 1. Emitter 2. Collector 3. Base 3 2 1 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current www. DataSheet4U. com Collector peak current Symbol VCBO VCEO VEBO IC ic(peak).
  • PC Tj Tstg Ratings 80 80 6 2 3 0.9 150.
  • 55 to +150 Unit V V V A A W °C °C.

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Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
D2491 2SD2491

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SD2485 Silicon NPN Epitaxial Application Low frequency power amplifier TO-92MOD. Features • Low saturation voltage VCE(sat) = 0.1 V typ. (at IC = 1 A, IB = 50 mA) • Large current capacitance IC = 2 A 1. Emitter 2. Collector 3. Base 3 2 1 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current www.DataSheet4U.com Collector peak current Symbol VCBO VCEO VEBO IC ic(peak)* PC Tj Tstg Ratings 80 80 6 2 3 0.