6AM15 - Silicon N/P Channel MOS FET High Speed Power Switching
Hitachi Semiconductor (now Renesas)
Features
Low on-resistance N Channel : RDS(on) = 0.045 Ω typ. P Channel : RDS(on) = 0.085 Ω typ. High speed switching 4 V gate drive device can be driven from 5 V source High density mounting.
Outline
6AM15
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Nch Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel dissipation Chann.
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6AM15
Silicon N/P Channel MOS FET High Speed Power Switching
ADE-208-719 (Z) 1st. Edition February 1999 Features
• Low on-resistance N Channel : RDS(on) = 0.045 Ω typ. P Channel : RDS(on) = 0.085 Ω typ. High speed switching 4 V gate drive device can be driven from 5 V source High density mounting
• • •
Outline
6AM15
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Nch Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. 6 Devices operation 3.
6AM15 Datasheet
