3SK186 Datasheet (Hitachi Semiconductor) - Silicon N-Channel Dual Gate MOS FET

3SK186, Silicon N-Channel Dual Gate MOS FET

3SK186 Silicon N-Channel Dual Gate MOS FET Application UHF TV tuner RF amplifier Outline MPAK-4 2 3 1 4 1.

Source 2.

Gate1 3.

Gate2 4.

Drain 3SK186 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 12 ±10 ±10 35 150 125 55 to +125 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C)