2SK3290 - N-Channel MOSFET

Hitachi Semiconductor

Datasheet Details

Part number	2SK3290
Manufacturer	Hitachi Semiconductor
File Size	39.50 KB
Description	N-Channel MOSFET
Datasheet	2SK3290_HitachiSemiconductor.pdf

Low on-resistance R DS = 0.455 Ω typ. (VGS = 10 V , ID = 250 mA) R DS = 0.9 Ω typ. (VGS = 4 V , ID = 100 mA).
4 V gate drive device.
Small package (MPAK) Outline MPAK 3 1 D 2 G 1. Source 2. Gate 3. Drain S 2SK3290 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(.

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Published: Mar 30, 2005 |