2SK3288 - N-Channel MOSFET

Hitachi Semiconductor

Datasheet Details

Part number	2SK3288
Manufacturer	Hitachi Semiconductor
File Size	39.30 KB
Description	N-Channel MOSFET
Datasheet	2SK3288_HitachiSemiconductor.pdf

Low on-resistance R DS = 2.7 Ω typ. (VGS = 10 V , ID = 50 mA) R DS = 4.7 Ω typ. (VGS = 4 V , ID = 20 mA).
4 V gate drive device.
Small package (MPAK) Outline MPAK 3 1 D 2 G 1. Source 2. Gate 3. Drain S 2SK3288 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(puls.

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Published: Mar 30, 2005 |