2SK3160 - Silicon N-Channel MOSFET

Hitachi Semiconductor

Datasheet Details

Part number	2SK3160
Manufacturer	Hitachi Semiconductor
File Size	51.67 KB
Description	Silicon N-Channel MOSFET
Datasheet	2SK3160_HitachiSemiconductor.pdf

Low on-resistance R DS = 130 mΩ typ.
High speed switching.
4 V gate drive device can be driven from 5 V source Outline TO.
220FM D G 1 2 S 1. Gate 2. Drain 3. Source 3 2SK3160 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID.

📁 2SK3160 Similar Datasheet

Other Datasheets by Hitachi Semiconductor

Published: Mar 30, 2005 |