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2SK2939(L),2SK2939(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-562D (Z) 5th. Edition Jun 1998 Features
• Low on-resistance R DS =0.020 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source
Outline
LDPAK
4 4
D
G 1 2
1
2
3
3
S
1. Gate 2. Drain 3. Source 4. Drain
2SK2939(L),2SK2939(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP
Note3 Note3 Note2 Note1
Ratings 60 ±20 35 140 35 35 105 50 150 –55 to +150
Unit V V A A A A mJ W °C °C
EAR
Pch Tch
Tstg
1.
2SK2939 Datasheet
