2SK2735S - Silicon N-Channel MOS FET

Hitachi Semiconductor

Datasheet Details

Part number	2SK2735S
Manufacturer	Hitachi Semiconductor
File Size	39.50 KB
Description	Silicon N-Channel MOS FET
Datasheet	2SK2735S_HitachiSemiconductor.pdf

Low on-resistance R DS = 20 mΩ typ.
High speed switching.
4V gate drive device can be driven from 5V source Outline DPAK.
2 4 4 D 1 2 G 3 S 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SK2735(L), 2SK2735(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty.

📁 2SK2735S Similar Datasheet

2SK2731 - Transistor (Rohm)
2SK2733 - Silicon N-Channel MOS Type Field Effect Transistor (Toshiba Semiconductor)
2Sk2734 - Silicon N-Channel MOSFET (Renesas)
2SK270 - Silicon N-Channel Transistor (Toshiba)
2SK2700 - N-Channel MOSFET (Toshiba Semiconductor)
2SK2701 - MOSFET (Sanken electric)
2SK2701A - N-Channel MOSFET (INCHANGE)
2SK2702 - MOSFET (Sanken electric)

Other Datasheets by Hitachi Semiconductor

Published: Mar 30, 2005 |