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2SK2059S - Silicon N-Channel MOSFET

Features

  • Low on-resistance High speed switching No Secondary Breakdown Suitable for Switching regulator, DC - DC converter Outline DPAK-1 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S 2 3 2 3 2SK2059(L), 2SK2059(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs,.

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2SK2059(L), 2SK2059(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching No Secondary Breakdown Suitable for Switching regulator, DC - DC converter Outline DPAK-1 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S 2 3 2 3 2SK2059(L), 2SK2059(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2.
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