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2SJ551(L),2SJ551(S)
Silicon P Channel MOS FET High Speed Power Switching
ADE-208-647B (Z) 3rd. Edition Jun 1998 Features
• Low on-resistance R DS(on) = 0.050 Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching.
Outline
LDPAK
4 4
D 1 1
2
3
G
2
3
1. Gate 2. Drain 3. Source 4. Drain
S
2SJ551(L),2SJ551(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse)
Note1
Ratings –60 ±20 –18 –72 –18
Unit V V A A A A mJ W °C °C
Body-drain diode reverse drain current I DR Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: I AP
Note3 Note3 Note2
–18 27 60 150 –55 to +150
EAR
Pch Tch
Tstg
1.
2SJ551S Datasheet
