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2SJ278
Silicon P-Channel MOS FET
Application
High speed power switching
Features
• • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter
Outline
UPAK 2 1 4
3
D G 1. Gate 2. Drain 3. Source 4. Drain S
2SJ278
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg
2 1
Ratings –60 ±20 –1 –4 –1 1 150 –55 to +150
Unit V V A A A W °C °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value on the alumina ceramic board (12.5×20×0.7 mm) 3. Marking is “MY”.
2SJ278 Datasheet
