Datasheet4U Logo Datasheet4U.com

2SJ160 - P-Channel MOSFET

Features

  • Good frequency characteristic High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics Equipped with gate protection diodes Suitable for audio power amplifier 2SJ160, 2SJ161, 2SJ162 Outline TO-3P D G 1 2 3 1. Gate 2. Source (Flange) 3. Drain S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SJ160 2SJ161 2SJ162 Gate to source voltage Drain current Body to drain.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SJ160 Silicon P-Channel MOSFET Renesas
2SJ161 Silicon P-Channel MOSFET Renesas
2SJ162 Silicon P-Channel MOSFET Renesas
2SJ163 P-Channel MOSFET Panasonic Semiconductor
2SJ164 P-Channel MOSFET Panasonic Semiconductor

Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
2SJ161 P-Channel MOSFET
2SJ162 P-Channel MOSFET
2SJ113 SILICON P-CHANNEL MOS FET
2SJ114 HIGH FREQUENCY POWER AMPLIFIER
2SJ116 SILICON P-CHANNEL MOS FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2SJ160, 2SJ161, 2SJ162 Silicon P-Channel MOS FET Application Low frequency power amplifier Complementary pair with 2SK1056, 2SK1057 and 2SK1058 Features • • • • • • • Good frequency characteristic High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics Equipped with gate protection diodes Suitable for audio power amplifier 2SJ160, 2SJ161, 2SJ162 Outline TO-3P D G 1 2 3 1. Gate 2. Source (Flange) 3. Drain S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SJ160 2SJ161 2SJ162 Gate to source voltage Drain current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1.
Published: |