2SC5057 - Silicon NPN Triple Diffused Planar Transistor

Hitachi Semiconductor

Datasheet Details

Part number	2SC5057
Manufacturer	Hitachi Semiconductor
File Size	32.92 KB
Description	Silicon NPN Triple Diffused Planar Transistor
Datasheet	2SC5057-HitachiSemiconductor.pdf

High breakdown voltage VCBO = 1700 V Outline TO-3PL 1 2 3 1. Base 2. Collector 3. Emitter 2SC5057 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector surge current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C Symbol VCBO VCEO VEBO IC IC(surge) PC.
1 Tj Tstg Ratings 1700 900 6 20 25 200 150.
55 to +150 Unit V V V A A W °C.

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Published: Jun 12, 2016 |