1S2076A

The 1S2076A is Silicon Epitaxial Planar Diode designed by Hitachi Semiconductor.

Product Overview

Hitachi Semiconductor

Part number	1S2076A
Manufacturer	Hitachi Semiconductor
File Size	25.55 KB
Description	Silicon Epitaxial Planar Diode
Datasheet	1S2076A_HitachiSemiconductor.pdf
Additional preview pages of the 1S2076A datasheet.

Low capacitance. (C = 3.0pF max).
Short reverse recovery time. (trr = 8.0ns max).
High reliability with glass seal. Ordering Information Type No. 1S2076A Cathode band Navy Blue Package Code DO-35 Outline ADE-208-146A (Z) Rev. 1 Aug. 1995 1 2 Cathode band 1. Cathode 2. Anode 1S2076A Absolute Maximum Ratings (Ta = 25°C) Item Peak reverse voltage Reverse voltage Peak forward current Non-Repetitive peak forward surge current Average forward current Power diss.

📁 Similar Datasheet

1S20 - SCHOTTKY BARRIER RECTIFIER (Rectron Semiconductor)
1S200 - Schottky Barrier Rectifier (Yangzhou Yangjie)
1S2093 - SILICON PLANAR TYPE TRIGGER DIODE (Toshiba Semiconductor)
1S2094 - VARIABLE CAPACITANCE DIODE (Toshiba Semiconductor)
1S2 - 1 AMPERE SCHOTTKY BARRIER RECTIFIERS (Pan Jit International Inc.)
1S2236 - SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE (Toshiba Semiconductor)
1S22x - (1S220 - 1S261) ZENER DIODE (Toshiba)
1S23x - (1S220 - 1S261) ZENER DIODE (Toshiba)

Other Datasheets by Hitachi Semiconductor

Published: Sep 20, 2025 |