Description
HI-SINCERITY MICROELECTRONICS CORP.HSB562 PNP EPITAXIAL PLANAR TRANSISTOR Spec.No.: HE6513 Issued Date : 1993.01.15 Revised Date : 2005.02.14 Page.
The HSB562 is designed for general purpose low frequency power amplifier applications.
Maximum Temperatur.
Applications
* Absolute Maximum Ratings
TO-92
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum
* Maximum Power Dissipation Total Power Dissipation (TA=25°C) 900 mW
* Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage