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HSB562, HSB562_Hi PNP EPITAXIAL PLANAR TRANSISTOR

HSB562 Description

HI-SINCERITY MICROELECTRONICS CORP.HSB562 PNP EPITAXIAL PLANAR TRANSISTOR Spec.No.: HE6513 Issued Date : 1993.01.15 Revised Date : 2005.02.14 Page.
The HSB562 is designed for general purpose low frequency power amplifier applications. Maximum Temperatur.

HSB562 Applications

* Absolute Maximum Ratings TO-92
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum
* Maximum Power Dissipation Total Power Dissipation (TA=25°C) 900 mW
* Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage

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This datasheet PDF includes multiple part numbers: HSB562, HSB562_Hi. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
HSB562, HSB562_Hi
Manufacturer
Hi-Sincerity Mocroelectronics
File Size
50.75 KB
Datasheet
HSB562_Hi-SincerityMocroelectronics.pdf
Description
PNP EPITAXIAL PLANAR TRANSISTOR
Note
This datasheet PDF includes multiple part numbers: HSB562, HSB562_Hi.
Please refer to the document for exact specifications by model.

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PNP EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics
Hi-Sincerity Mocroelectronics HSB562-like datasheet