Description
HI-SINCERITY MICROELECTRONICS CORP.HMBTA94 PNP EPITAXIAL PLANAR TRANSISTOR Spec.No.: HN200209 Issued Date : 2000.11.01 Revised Date : 2004.08.17 P.
The HMBTA94 is designed for application that requires high voltage.
High Breakdown Voltage: VCEO=400(Min.
Com.
Features
* High Breakdown Voltage: VCEO=400(Min. ) at IC=1mA
* Complementary to HMBTA44
SOT-23
Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum
* Maximum Power Dissipation Total Power Dissipation (TA=25°C