HMBT5401, HMBT5401_Hi - PNP Transistor

Hi-Sincerity Mocroelectronics

Datasheet Details

Part number	HMBT5401, HMBT5401_Hi
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	38.75 KB
Description	PNP Transistor
Datasheet	HMBT5401_Hi-SincerityMocroelectronics.pdf
Note	This datasheet PDF includes multiple part numbers: HMBT5401, HMBT5401_Hi. Please refer to the document for exact specifications by model.

The HMBT5401 is designed for general purpose applications requiring high breakdown voltages.

High Collector-Emitter Breakdown Voltage (BVCEO=150V@IC=1mA).
Complements to NPN Type HMBT5551 SOT-23 Absolute Maximum Ratings.
Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
Maximum Power Dissipation Total Power Dissipation (TA=25°C) 225 mW.
Maximum Voltages and Currents (TA=25°C) VCBO Collector to B.

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Published: Mar 26, 2005 |