Description
HI-SINCERITY MICROELECTRONICS CORP.Spec.No.: HE9511 Issued Date : 1996.04.12 Revised Date : 2002.10.01 Page No.: 1/3 HM965 NPN EPITAXIAL PLANAR .
The HM965 is designed for use as AF output amplifier and glash unit.
Low VCE(sat).
High performance at low supply voltage.
Features
* Low VCE(sat)
* High performance at low supply voltage
SOT-89
Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum
* Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 1.2 W
* Max
Applications
* or systems.
* HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory:
* Head Office (Hi-Sincerity Microelectronics Corp. ): 10F. ,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R. O. C. Tel:
