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HM965, HM965_Hi NPN Transistor

HM965 Description

HI-SINCERITY MICROELECTRONICS CORP.Spec.No.: HE9511 Issued Date : 1996.04.12 Revised Date : 2002.10.01 Page No.: 1/3 HM965 NPN EPITAXIAL PLANAR .
The HM965 is designed for use as AF output amplifier and glash unit. Low VCE(sat). High performance at low supply voltage.

HM965 Features

* Low VCE(sat)
* High performance at low supply voltage SOT-89 Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum
* Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 1.2 W
* Max

HM965 Applications

* or systems.
* HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory:
* Head Office (Hi-Sincerity Microelectronics Corp. ): 10F. ,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R. O. C. Tel:

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: HM965, HM965_Hi. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
HM965, HM965_Hi
Manufacturer
Hi-Sincerity Mocroelectronics
File Size
27.86 KB
Datasheet
HM965_Hi-SincerityMocroelectronics.pdf
Description
NPN Transistor
Note
This datasheet PDF includes multiple part numbers: HM965, HM965_Hi.
Please refer to the document for exact specifications by model.

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NPN Transistor Hi-Sincerity Mocroelectronics
Hi-Sincerity Mocroelectronics HM965-like datasheet