HM5551, HM5551_Hi NPN EPITAXIAL PLANAR TRANSISTOR

Hi-Sincerity Mocroelectronics

HM5551 Description

HI-SINCERITY MICROELECTRONICS CORP.HM5551 NPN EPITAXIAL PLANAR TRANSISTOR Spec.No.: HE9507 Issued Date : 1996.04.09 Revised Date : 2004.11.24 Page.
The HM5551 is designed for general purpose applications requiring high breakdown voltages. High collector-emitter breakdown voltage.

HM5551 Features

* High collector-emitter breakdown voltage. VCEO>160V(@IC=1mA)
* Complements to PNP type HM5401 SOT-89 Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum
* Maximum Power Dissipation Total Power Di

📥 Download Datasheet

HM5551 Datasheet Preview — This datasheet PDF includes multiple part numbers: HM5551, HM5551_Hi. Please refer to the document for exact specifications by model.

Datasheet Details

Part number: HM5551, HM5551_Hi
Manufacturer: Hi-Sincerity Mocroelectronics
File Size: 41.08 KB
Datasheet: HM5551_Hi-SincerityMocroelectronics.pdf
Description: NPN EPITAXIAL PLANAR TRANSISTOR
Note: This datasheet PDF includes multiple part numbers: HM5551, HM5551_Hi.
Please refer to the document for exact specifications by model.

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NPN EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics

Hi-Sincerity Mocroelectronics HM5551-like datasheet

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