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HJ210, HJ210_Hi - PNP EPITAXIAL PLANAR TRANSISTOR

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This datasheet PDF includes multiple part numbers: HJ210, HJ210_Hi. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number HJ210, HJ210_Hi
Manufacturer Hi-Sincerity Mocroelectronics
File Size 23.32 KB
Description PNP EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HJ210_Hi-SincerityMocroelectronics.pdf
Note This datasheet PDF includes multiple part numbers: HJ210, HJ210_Hi.
Please refer to the document for exact specifications by model.

HJ210 Product details

Description

The HJ210 is designed for low voltage, low-power, high-gain audio amplifier applications. Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum Power Dissipation Total Power Dissipation (Tc=25°C) 12.5 W Maximum Voltages and Currents BVCBO Collector to Base Voltage -40 V BVCEO Collector to Emitter Voltage

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