Description
HI-SINCERITY MICROELECTRONICS CORP.HE8550S PNP EPITAXIAL PLANAR TRANSISTOR Spec.No.: HE6129 Issued Date : 1993.01.15 Revised Date : 2004.07.26 Pag.
The HE8550S is designed for general purpose amplifier applications.
High DC Current gain: 100-500 at IC=150mA.
Complement.
Features
* High DC Current gain: 100-500 at IC=150mA
* Complementary to HE8050S
TO-92
Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum
* Maximum Power Dissipation Total Power Dissipation (TA=25°C) 625 m