HE8550S Features
* High DC Current gain: 100-500 at IC=150mA
* Complementary to HE8050S TO-92 Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum
* Maximum Power Dissipation Total Power Dissipation (TA=25°C) 625 m
HE8550S_Hi-SincerityMocroelectronics.pdf
Datasheet Details
HE8550S, HE8550S_Hi
Hi-Sincerity Mocroelectronics
54.48 KB
Pnp transistor.
This datasheet PDF includes multiple part numbers: HE8550S, HE8550S_Hi.
Please refer to the document for exact specifications by model.
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