H4435S, H4435S_Hi P-Channel Enhancement-Mode MOSFET

Hi-Sincerity Mocroelectronics

Description

HI-SINCERITY MICROELECTRONICS CORP.Spec.No.: MOS200101) Issued Date : 2008.01.12 Revised Date :2009.02.06 Page No.: 1/5 H4435S P-Channel Enhance.

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H4435S Datasheet Preview — This datasheet PDF includes multiple part numbers: H4435S, H4435S_Hi. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: H4435S, H4435S_Hi
Manufacturer: Hi-Sincerity Mocroelectronics
File Size: 170.63 KB
Datasheet: H4435S_Hi-SincerityMocroelectronics.pdf
Description: P-Channel Enhancement-Mode MOSFET
Note: This datasheet PDF includes multiple part numbers: H4435S, H4435S_Hi.
Please refer to the document for exact specifications by model.

Features

* RDS(on)=20mΩ@VGS=-10V, ID=-9.1A
* RDS(on)=35mΩ@VGS=-4.5V, ID=-6.9A
* Advanced trench process technology
* High Density Cell Design for Ultra Low On-Resistance 5 6 7 8 4 3 2 1 Pin 1 / 2 / 3: Source Pin 4: Gate Pin 5 / 6 / 7 / 8: Drain Absolute Maximum Ratings (TA

Applications

* or systems.
* HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory:
* Head Office (Hi-Sincerity Microelectronics Corp. ): 10F. ,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R. O. C. Tel:

H4435S Distributors

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H4435S_Hi P-Channel Enhancement-Mode MOSFET Hi-Sincerity Mocroelectronics

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