IRF820 - N-Channel Power MOSFETs

Harris

Datasheet Details

These are N-Channel enhancement mode silicon gate power ﬁeld effect transistors.

2.2A and 2.5A, 450V and 500V.
rDS(ON) = 3.0Ω and 4.0Ω.
Single Pulse Avalanche Energy Rated.
SOA is Power Dissipation Limited.
Nanosecond Switching Speeds.
Linear Transfer Characteristics.
High Input Impedance.
Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol Ordering Information D PART NUMBER IRF820 IRF821 IRF822 IRF823.

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Published: Aug 8, 2014 |