IRF320 Datasheet (Harris) - N-Channel Power MOSFETs

IRF320, N-Channel Power MOSFETs

These are N-Channel enhancement mode silicon gate power ﬁeld effect transistors.

They are advanced power MOSFETs designed, tested, and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of operation.

All of these power MOSFETs are designed for applications such as swi

IRF320 Features

* 2.8A and 3.3A, 350V and 400V

* rDS(ON) = 1.8Ω and 2.5Ω

* Single Pulse Avalanche Energy Rated

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* Majority Carrier