IRF320 - N-Channel Power MOSFETs

Harris

Datasheet Details

These are N-Channel enhancement mode silicon gate power ﬁeld effect transistors.

2.8A and 3.3A, 350V and 400V.
rDS(ON) = 1.8Ω and 2.5Ω.
Single Pulse Avalanche Energy Rated.
SOA is Power Dissipation Limited.
Nanosecond Switching Speeds.
Linear Transfer Characteristics.
High Input Impedance.
Majority Carrier Device.
Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART NUMBER IRF320 IRF321 IRF322 IRF323.

📁 IRF320 Similar Datasheet

IRF3205 - N-Channel Trench Process Power MOSFET Transistor (Thinki Semiconductor)
IRF3205A - N-Channel Power MOSFET (nELL)
IRF3205H - N-Channel Power MOSFET (nELL)
IRF3205L - N-Channel Power MOSFET (International Rectifier)
IRF3205LPBF - Power MOSFET (International Rectifier)
IRF3205PBF - HEXFET Power MOSFET (International Rectifier)
IRF3205S - Power MOSFET (International Rectifier)
IRF3205SPBF - Power MOSFET (International Rectifier)

Other Datasheets by Harris

Published: Aug 8, 2014 |