IRFD1Z0 - N-Channel MOSFET

Harris Semiconductor

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Datasheet Details

Part number	IRFD1Z0
Manufacturer	Harris Semiconductor
File Size	57.16 KB
Description	N-Channel MOSFET
Datasheet	IRFD1Z0-HarrisSemiconductor.pdf

IRFD1Z0 Product details

Description

These are N-Channel enhancement mode silicon gate power ﬁeld effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.

Features

0.4A and 0.5A, 60V and 100V.
rDS(ON) = 2.4Ω and 3.2Ω.
SOA is Power Dissipation Limited.
Nanosecond Switching Speeds.
Linear Transfer Characteristics.
High Input Impedance.
Majority Carrier Device.
Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”.

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Published: Sep 10, 2018 |