R2658P - PHOTOMULTIPLIER TUBES

Hamamatsu Corporation

📥 Download Datasheet

R2658P Datasheet Preview — Preview of R2658P PDF

Datasheet Details

Part number	R2658P
Manufacturer	Hamamatsu Corporation
File Size	105.76 KB
Description	PHOTOMULTIPLIER TUBES
Datasheet	R2658P_HamamatsuCorporation.pdf

R2658P Product details

Description

Value Unit 185 to 1010 400 InGaAs (Cs) 3 × 12 UV glass Cu-BeO Circular-cage 9 Approx. mm pF pF g 0.01 100 200 300 400 500 600 700 800 900 1000 1100 TPMSB0150EA 100 CATHODE RADIANT SENSITIVITY CATHODE RADIANT SENSITIVITY (mA/W) QUANTUM EFFICIENCY (%) nm 10 Window Material Structure Number of Stages Anode to Last Dynode Anode to All Other Elec

Features

High QE in Near IR Region QE 0.13% at 1 µ m Wide Wavelength Range 185 to 1010 nm Low Dark Current 1 nA at 1250 V (Typ. ) The R2658 and the R2658P are 28 mm (1-1/8 inch) diameter side-on photomultiplier tubes using a newly developed InGaAs semiconductor photocathode. The InGaAs photocathode is sensitive from UV to near IR radiations (as long as over 1010 nm) longer than wavelength limit of GaAs photocathode, and yet offers low dark current. The dark current is 2 orders lower than the commercia.

📁 R2658P Similar Datasheet

R2619ZC18J - Distributed Gate Thyristor (IXYS)
R2619ZC18K - Distributed Gate Thyristor (IXYS)
R2619ZC18L - Distributed Gate Thyristor (IXYS)
R2619ZC20J - Distributed Gate Thyristor (IXYS)
R2619ZC20K - Distributed Gate Thyristor (IXYS)
R2619ZC20L - Distributed Gate Thyristor (IXYS)
R2619ZC21J - Distributed Gate Thyristor (IXYS)
R2619ZC21K - Distributed Gate Thyristor (IXYS)

Other Datasheets by Hamamatsu Corporation

R2658 - PHOTOMULTIPLIER TUBES
R2693 - PHOTOMULTlPLlER TUBES
R2693P - PHOTOMULTlPLlER TUBES

Published: Apr 16, 2005 |