1N4731A-G - SILICON ZENER DIODE

Download the 1N4731A-G datasheet PDF. This datasheet also covers the 1N4728A-G variant, as both devices belong to the same silicon zener diode family and are provided as variant models within a single manufacturer datasheet.

Features

Low profile package.
Built-in strain relief.
Low inductance.
High temperature soldering : 260°C /10 seconds at terminals.
Glass package has Underwriters Laboratory Flammability Classification.
In compliance with EU RoHS 2002/95/EC directives.

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1N4731A-G silicon zener diode by HY - Datasheet Preview — Note: The manufacturer provides a single datasheet file (1N4728A-G-HY.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	1N4731A-G
Manufacturer	HY
File Size	163.53 KB
Description	SILICON ZENER DIODE
Datasheet	1N4731A-G Datasheet

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Other Datasheets by HY

Part Number	Description
1N4730A-G	SILICON ZENER DIODE
1N4732A-G	SILICON ZENER DIODE
1N4733A-G	SILICON ZENER DIODE
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1N4735A-G	SILICON ZENER DIODE

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

SILICON ZENER DIODE FEATURES ● Low profile package ● Built-in strain relief ● Low inductance ● High temperature soldering : 260°C /10 seconds at terminals ● Glass package has Underwriters Laboratory Flammability Classification ● In compliance with EU RoHS 2002/95/EC directives APPLICATIONS ● Case: Molded Glass DO-41G ● Terminals: Axial leads, solderable per MIL-STD-750, Method 2026 guaranteed ● Polarity: Color band denotes positive end ● Mounting position:Any ● Weight: 0.012 ounce, 0.336 gram 1N4728A-G thru 1N4764A-G REVERSE VOLTAGE - 3.3 to 100 Volts FORWARD CURRENT - 1.0 Watts DO-41G Dimensions in inches and (millimeters) Ratings at 25°C ambient temperature unless otherwise specified.