HYG170ND03LA1C1 Dual N-Channel Enhancement Mode MOSFET

HUAYI

Description

HYG170ND03LA1C1 Dual N-Channel Enhancement Mode MOSFET .
D2 D2 D1 D1 D1 D1 D2 D2 D1 D2 Pin1 S2 G2 S1 G1 G1 S1 G2 S2 DFN3. 3-8L Applications. Switching Application. Power Management for.

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Datasheet Specifications

Part number: HYG170ND03LA1C1
Manufacturer: HUAYI
File Size: 837.62 KB
Datasheet: HYG170ND03LA1C1-HOOYI.pdf
Description: Dual N-Channel Enhancement Mode MOSFET

Applications

* Switching Application
* Power Management for DC/DC
* Battery Protection Ordering and Marking Information C1 G170ND03 XYWXXXXXX Dual N-Channel MOSFET Package Code C1: DFN3
* 3-8L Date Code XYWXXXXXX Note:HUAYI lead-free products contain molding compounds/die attach materials and 10

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HYG170ND03LA1C1 Dual N-Channel Enhancement Mode MOSFET HUAYI

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